unisonic technologies co., ltd 18n50 power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2012 unisonic technologies co., ltd qw-r502-477.g 18 a , 500v n-channel power mosfet ? description the utc 18n50 is an n-channel enhancement mode power mosfet using utc?s advanced planar stripe and dmos technology to provide perfect performance. this technology can withstand high energy pulse in the avalanche and commutation mode. it can provid e minimum on-state resistance and high switching speed. this device is generally applied in active power factor correction and high efficient switched mode power supplies. ? features * r ds(on) =0.32 ? @ v gs =10v * high switching speed * typically 45nc low gate charge * 100% avalanche tested * typically 25pf low c rss * improved dv/dt capability ? symbol 1.gate 3.source 2.drain to-220f1 1 to-220f2 1 to-263 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 18n50l-tf1-t 18n50g-tf1-t to-220f1 g d s tube 18N50L-TF2-T 18n50g-tf2-t to-220f2 g d s tube 18n50l-tq2-t 18n50g-tq2-t to-263 g d s tube 18n50l-tq2-r 18n50g-tq2-r to-263 g d s tape reel note: pin assignment: g: gate d: drain s: source
18n50 power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-477.g ? absolute maximum ratings (unless otherwise specified) parameter symbol ratings unit drain to source voltage v dss 500 v gate to source voltage v gss 30 v drain current continuous i d 18 a pulsed (note 2) i dm 72 (note 5) a avalanche energy single pulsed (note 3) e as 945 mj repetitive (note 2) e ar 23.5 mj avalanche current (note 2) i ar 18 a peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns power dissipation to-220f1 p d 38.5 w to-220f2 40.5 to-263 23.5 junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width lim ited by maximum junction temperature 3. l=5.2mh, i as =18a, v dd =50v, r g =25 ? , starting t j =25c 4. i sd 18a, di/dt 200a/ s, v dd bv dss , starting t j =25c 5. drain current limited by maximum junction temperature ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case to-220f1 jc 3.3 c/w to-220f2 3.0 to-263 0.53
18n50 power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-477.g ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 500 v breakdown voltage temperature coefficient bv dss / t j i d =250 a,referenced to 25c 0.5 v/c drain-source leakage current i dss v ds =500v, v gs =0v 1 a v ds =400v, t c =125c 10 a gate-source leakage current forward i gss v gs = 30 v, v ds = 0 v 100 na reverse v gs = -30 v, v ds = 0 v -100 on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 2.0 4.0 v drain-source on-state resistance r ds ( on ) v gs =10v, i d =9a 0.24 0.32 ? forward transconductance g fs v ds =40v, i d =9a (note 1) 25 s dynamic parameters input capacitance c iss v ds =25v,v gs =0v,f=1.0mhz 2200 2860 pf output capacitance c oss 330 430 pf reverse transfer capacitance c rss 25 40 pf switching parameters total gate charge q g v ds =400v, v gs =10v, i d =18a (note 1,2) 45 60 nc gate-source charge q gs 12.5 nc gate-drain charge q gd 19 nc turn-on delay time t d ( on ) v dd =250v, i d =18a, r g =25 ? (note 1,2) 55 120 ns turn-on rise time t r 165 340 ns turn-off delay time t d ( off ) 95 200 ns turn-off fall time t f 90 190 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 18 a maximum body-diode pulsed current i sm 72 a drain-source diode forward voltage v sd i s =18a, v gs =0v 1.4 v body diode reverse recovery time t r r v gs =0v, i s =18a, di f /dt=100a/ s (note 1) 500 ns body diode reverse recovery charge q rr 5.4 c note: 1. pulse test : pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
18n50 power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-477.g ? test circuits and waveforms v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd same type as dut i sd v gs l driver peak diode recovery dv/dt test circuit & waveforms v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current
18n50 power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-477.g ? test circuits and waveforms(cont.) gate charge test circui t gate charge waveforms resistive switching test circui t resistive switching waveforms 10v t p r g dut l v ds i d v dd t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching test circuit unclamped inductive switching waveforms
18n50 power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-477.g ? typical characteristics drain current vs. drain-source breakdown voltage drain current, i d (a) drain-source breakdown voltage, bv dss (v) 0 drain current vs. gate threshold voltage drain current, i d (a) gate threshold voltage, v th (v) 2 4 13 0 50 100 150 200 250 300 0 100 300 400 600 200 0 50 100 150 200 250 300 500 drain current, i d (a) drain current, i d (a) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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